Title :
Improved phosphorus injection synthesis for bulk indium phosphide
Author :
Higgins, W.M. ; Iseler, G.W. ; Bliss, D.F. ; Bryant, G. ; Tassev, V. ; Jafri, I. ; Ware, R.M. ; Carlson, D.J.
Author_Institution :
M/A-COM. Inc., Lowell, MA, USA
Abstract :
High purity, stoichiometric InP is being produced in crucible-shaped, 3-kg charges by the phosphorus injection method in a high-pressure magnetic liquid encapsulated Czochralski (MLEC) crystal growth system. Dedicated heaters in the phosphorus injector assembly are used to heat and controllably inject the phosphorus vapor into the liquid encapsulated indium melt. Glow discharge mass spectroscopy and van der Pauw measurements of the polycrystalline charges and Czochralski wafers confirmed the low background levels of impurities
Keywords :
III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; stoichiometry; InP; P injection synthesis; glow discharge mass spectroscopy; high-pressure magnetic liquid encapsulated Czochralski crystal growth system; stoichiometric InP; van der Pauw measurements; Argon; Assembly; Atmosphere; Control system synthesis; Heat transfer; Heating; Indium phosphide; Magnetic liquids; Silicon compounds; Temperature control;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850350
