High Quality of 0.18μm CMOS 5.2GHz cascode LNA for RFID tag applications

Author

Hsin-Chia Yang ; Ssu-Hao Peng ; Shea-Jue Wang ; Mu-Chun Wang ; Chun-Wei Lian ; Jie-Min Yang ; Hung-I Chin ; Chuan-Hsi Liu

Author_Institution

Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan

fYear

2013

fDate

25-26 Feb. 2013

Firstpage

313

Lastpage

316

Abstract

An operation in 1.8V supply voltage single-ended cascode low-noise amplifier (LNA) structure was launched. This designed circuit provided the lower noise figure and matched the suitable LC tank to enhance the central operating frequency as well as the excellent input and output impedance matching incorporated into this LNA circuit. In this simulation, the Agilent ADS (Advanced Design System) simulation software and tsmc 0.18 μm CMOS process parameters were adopted to achieve the low-cost characteristics and high integration to fit the performance of 5.2 GHz LNA design under IEEE 802.11a specification. Due to the precise calculation gaining the good impedance matching, the simulation results showed the forward gain (S₂₁) about 12.96dB, as well as less than -15dB isolation (S₁₂). The input impedance (S₁₁) and the output impedance (S₂₂) also represented good performance. In addition, the minimum noise figure and the signal linearity performance were quite good, so that this LNA circuit was better in the availability and possibility of RFID tags.

Keywords

CMOS analogue integrated circuits; circuit simulation; impedance matching; integrated circuit design; low noise amplifiers; radiofrequency identification; wireless LAN; Advanced Design System simulation software; Agilent ADS simulation software; CMOS cascode LNA; IEEE 802.11a specification; LC tank; LNA circuit; LNA design; LNA structure; RFID tag application; circuit design; frequency 5.2 GHz; impedance matching; noise figure; single-ended cascode low-noise amplifier; size 0.18 mum; voltage 1.8 V; CMOS integrated circuits; Impedance matching; Noise; Noise figure; Radio frequency; Semiconductor device modeling; Wireless communication; 802.11a; LNA; cascode; gain; impedance matching; isolation; noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on

Conference_Location

Kaohsiung

Print_ISBN

978-1-4673-3036-7

Type

conf

DOI

10.1109/ISNE.2013.6512354

Filename

6512354