GaInNAs/GaAs multiple quantum-wells (MQWs) for 1.3 μm laser applications

Rapid progress has been made in the growth of GaInNAs/GaAs both by MOCVD using unsymmetrical dimethyl-hydrazine and by solid source MBE using an RF plasma source for the generation of atomic nitrogen. Significant improvements of material quality for 1.3 μm wavelength laser emission have been achieved with the best results realised so far by MBE growth. Based on this MBE material, ridge-waveguide lasers as well as narrow stripe oxide-confined lasers have been realised. Devices emitting close to 1.3 μm show threshold currents as low as 11 mA, slope efficiencies of 0.39 W/A and CW operation at 100°C. The performance data of these lasers demonstrate that this new material can successfully compete with the well matured InGaAsP/InP material system