GaInNAs/GaAs multiple quantum-wells (MQWs) for 1.3 μm laser applications

Author

Illek, S. ; Borchert, B. ; Ebbinghaus, G. ; Egorov, A.Yu. ; Riechert, H.

Author_Institution

Corp. Res. CPR PH, Infineon Technol., Munich, Germany

fYear

2000

fDate

2000

Firstpage

537

Lastpage

540

Abstract

Rapid progress has been made in the growth of GaInNAs/GaAs both by MOCVD using unsymmetrical dimethyl-hydrazine and by solid source MBE using an RF plasma source for the generation of atomic nitrogen. Significant improvements of material quality for 1.3 μm wavelength laser emission have been achieved with the best results realised so far by MBE growth. Based on this MBE material, ridge-waveguide lasers as well as narrow stripe oxide-confined lasers have been realised. Devices emitting close to 1.3 μm show threshold currents as low as 11 mA, slope efficiencies of 0.39 W/A and CW operation at 100°C. The performance data of these lasers demonstrate that this new material can successfully compete with the well matured InGaAsP/InP material system

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 μm laser applications; 1.3 mum; 100 C; GaInNAs-GaAs; GaInNAs/GaAs multiple quantum-wells; MBE growth; ridge-waveguide lasers; Atomic beams; Gallium arsenide; MOCVD; Nitrogen; Optical materials; Plasma sources; Quantum well devices; Quantum well lasers; Radio frequency; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850353

Filename

850353