Turn-on loss vs. free-wheel diode recovery dv/dt in IGBT modules

The latest 6^th generation Carrier Stored Trench Gate Bipolar Transistor (CSTBT™) provides state of the art optimization of conduction and switching losses in IGBT modules. Use of low values of resistance in series with the IGBT gate produces low turn-on losses but increases stress on the recovery of the free-wheel diode resulting in higher dv/dt and increased EMI. The latest modules also incorporate new, improved recovery free-wheel diode chips which improve this situation but detailed evaluation of the trade-off between turn-on loss and dv/dt performance is required. This paper describes the evaluation, test results, and a comparative analysis of dv/dt versus turn-on loss as a function of gate drive conditions for the 6^th generation IGBT compared to the standard 5^th generation module.