TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy

Author

Asahi, H. ; Ayabe, A. ; Lee, H.-J. ; Maeda, O. ; Konishi, K. ; Asami, K. ; Gonda, S.

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Japan

fYear

2000

fDate

2000

Firstpage

557

Lastpage

560

Abstract

TlInGaAsl/InP DH structures are grown on (100) InP substrates by gas source MBE. PL intensity for the DH structure is 10 times stronger than that of SH structure. Temperature variation of the PL peak energy is decreased with increasing Tl composition. The DH structure with Tl composition of 13% shows very small temperature variation of 0.03 meV/K. This value corresponds to the wavelength variation of 0.04 nm/K and is much smaller than the temperature variation of 0.1 nm/K for the lasing wavelength of InGaAsP/InP DFB laser diodes

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; interface structure; photoluminescence; semiconductor growth; semiconductor heterojunctions; stoichiometry; thallium compounds; (100) InP substrates; InP; PL intensity; PL peak energy; Tl composition; TlInGaAs-InP; TlInGaAs/InP DH structures; gas source MBE; lasing wavelength; small temperature-dependent bandgap energy; temperature variation; Ash; DH-HEMTs; Diode lasers; Indium gallium arsenide; Indium phosphide; Photonic band gap; Substrates; Temperature; Wavelength division multiplexing; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850358

Filename

850358