Negative differential resistance of InGaAs quantum wire FET

Author

Sugaya, T. ; Kim, S.J. ; Sugiyama, Y. ; Ogura, M.

Author_Institution

Electrotech. Lab. & CREST, Japan Sci. & Technol. Corp., Tsukuba, Japan

fYear

2000

fDate

2000

Firstpage

565

Lastpage

568

Abstract

Negative differential resistance (NDR) with high peak to valley ratio (PVR) and low onset voltage (V_NDR) are clearly observed in a quantum-wire field-effect transistor (QWR-FET) with the channel width of 100 nm, while it is not observed in a QWR-FET with the channel width of 300 nm. The saturation characteristics of Landau plots indicate that the 100 nm-width QWR has one-dimensional characteristics of electron transport, contrary to the 300 nm-width QWR which has two-dimensional electrons

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; negative resistance devices; one-dimensional conductivity; quantum well devices; semiconductor device measurement; semiconductor quantum wires; 100 nm; 300 nm; InGaAs; InGaAs quantum wire FET; Landau plots; NDR; channel width; electron transport; high peak to valley ratio; low onset voltage; negative differential resistance; one-dimensional characteristics; quantum-wire field-effect transistor; saturation characteristics; Electrons; Etching; FETs; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850360

Filename

850360