Low-frequency noise in AlSb/InAs and AlSb/InAsSb HEMTs

Author

Kruppa, W. ; Boos, J.B. ; Bennett, B.R. ; Yang, M.J.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2000

fDate

2000

Firstpage

569

Lastpage

572

Abstract

Measurements of the low-frequency noise in AlSb/InAs and AlSb/InAsSb HEMTs are reported. At room temperature, the slope of the noise level for a basic InAs-channel device is very close to ideal 1/f. A more advanced version of this device and the device with the InAsSb channel display a significant generation-recombination component. The Hooge parameter, α_H, for all the devices is in the range between 10^-3 and 10^-2 based on floating-gate measurements at low drain voltage. At lower temperatures, larger G-R components appear in all devices and move with temperature, indicating the presence of discrete trap levels. These noise Lorentzians become more prominent when the devices are exposed to visible light, and move up in frequency with increasing electric field

Keywords

1/f noise; III-V semiconductors; aluminium compounds; electron traps; electron-hole recombination; high electron mobility transistors; indium compounds; interface states; semiconductor device measurement; semiconductor device noise; 1/f noise; 20 C; AlSb-InAs; AlSb-InAsSb; AlSb/InAs HEMTs; AlSb/InAsSb HEMTs; Hooge parameter; InAs-channel device; InAsSb channel; electric field; floating-gate measurements; generation-recombination component; low drain voltage; low-frequency noise; noise Lorentzians; noise level; room temperature; trap levels; visible light; Circuit noise; Composite materials; Cryogenics; Gallium arsenide; HEMTs; Impact ionization; Low-frequency noise; MODFETs; Phase noise; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850361

Filename

850361