Title :
Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As HEMTs with super-flat interfaces fabricated on (411) A-oriented InP substrates
Author :
Higashiwaki, M. ; Kitada, T. ; Aoki, T. ; Shimomura, S. ; Yamashita, Y. ; Endoh, A. ; Hikosaka, K. ; Mimura, T. ; Matsui, T. ; Hiyamizu, S.
Author_Institution :
Graduate Sch. of Eng. Sci., Osaka Univ., Japan
Abstract :
In this paper, we report the device fabrication and characteristics of 50-nm-gate pseudomorphic In0.7Ga0.3 As/In0.52Al0.48As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular beam epitaxy, which is the first report, to our knowledge, of HEMTs grown on any InP substrate except a conventional (100)-oriented InP substrate. The pseudomorphic HEMTs on the (411)A InP substrate showed a higher electron mobility than those on the (100) InP substrate at not only low temperatures but also room temperature. The (411)A HEMTs provided excellent DC and RF characteristics, showing a very high transconductance (1.1 S/mm) and one of the best cutoff frequencies (355 GHz) ever reported
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor device measurement; semiconductor growth; (411) A-oriented InP substrates; 1.1 S/mm; 20 C; 355 GHz; 50 nm; DC characteristics; In0.7Ga0.3As-In0.52Al0.48 As; InP; MBE; RF characteristics; characteristics; cutoff frequencies; device fabrication; electron mobility; high electron mobility transistors; high transconductance; molecular beam epitaxy; pseudomorphic HEMTs; pseudomorphic In0.7Ga0.3As/In0.52Al0.48As HEMTs; room temperature; super-flat interfaces; Electron mobility; Fabrication; HEMTs; Indium phosphide; MODFETs; Molecular beam epitaxial growth; PHEMTs; Radio frequency; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850362
