Title :
Numerical simulation of metal-oxide-semiconductor metamorphic high-electron-mobility transistor
Author :
Jung-Sheng Huang ; Kuan-Wei Lee ; Po-Yu Lin ; Yu-Hsiang Tseng ; Chih-Hung Tu ; Raksavas, W.
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
Abstract :
The dc characteristics of InAlAs/InGaAs metamorphic high-electron-mobility transistor (MHEMT) and metal-oxide-semiconductor (MOS) MHEMT are investigated by analytical and numerical simulation methods. In equilibrium, the two-dimensional electron gas concentration, ns, and Fermi level are calculated by using the Newton method. When the gate voltages are applied, ns are calculated by using the charge-control model. Then the Poisson equation is simulated by the finite-difference method with ns as the boundary condition. The simulation results show that the MOS-MHEMT device improves the breakdown voltage and gate leakage current characteristics compared with MHEMT.
Keywords :
Fermi level; III-V semiconductors; MOSFET; Newton method; Poisson equation; aluminium compounds; finite difference methods; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; semiconductor device models; two-dimensional electron gas; Fermi level; InAlAs-InGaAs; MHEMT; MOS-MHEMT device; Newton method; Poisson equation; boundary condition; breakdown voltage; charge-control model; finite-difference method; gate leakage current characteristics; gate voltages; metal-oxide-semiconductor metamorphic high-electron-mobility transistor; numerical simulation methods; two-dimensional electron gas concentration; Electric fields; Indium gallium arsenide; Logic gates; MODFETs; mHEMTs; InAlAs/InGaAs; MHEMT; MOS-MHEMT; Numerical simulation;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512366
