DocumentCode
2126176
Title
Short channel effect of stack Si/SiGe pMOSFET
Author
Yu-Seng Lin ; Wen-Teng Chang
Author_Institution
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
fYear
2013
fDate
25-26 Feb. 2013
Firstpage
368
Lastpage
370
Abstract
This paper Characterize pMOSFETs with stach channel of Si/SiGe whose thickness ratio are 8 nm /6.6 nm and 5 nm /4.6 nm related to the device without relaxed SiGe with 10 μm/ 80 nm/ 32 nm channel length by 10um channel width. In addition to the ratio, short channel significantly affect the driving current and interfacial defect.
Keywords
Ge-Si alloys; MOSFET; Si-SiGe; driving current; interfacial defect; short channel effect; size 10 mum; size 32 nm; size 80 nm; stack pMOSFET; Logic gates; MOSFET; MOSFET circuits; Next generation networking; Silicon; Silicon germanium; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location
Kaohsiung
Print_ISBN
978-1-4673-3036-7
Type
conf
DOI
10.1109/ISNE.2013.6512369
Filename
6512369
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