Title :
Short channel effect of stack Si/SiGe pMOSFET
Author :
Yu-Seng Lin ; Wen-Teng Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
Abstract :
This paper Characterize pMOSFETs with stach channel of Si/SiGe whose thickness ratio are 8 nm /6.6 nm and 5 nm /4.6 nm related to the device without relaxed SiGe with 10 μm/ 80 nm/ 32 nm channel length by 10um channel width. In addition to the ratio, short channel significantly affect the driving current and interfacial defect.
Keywords :
Ge-Si alloys; MOSFET; Si-SiGe; driving current; interfacial defect; short channel effect; size 10 mum; size 32 nm; size 80 nm; stack pMOSFET; Logic gates; MOSFET; MOSFET circuits; Next generation networking; Silicon; Silicon germanium; Threshold voltage;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512369
