DocumentCode
2126293
Title
Simulation of self-heating effects on heterojunction bipolar transistors
Author
Yang-Hua Chang ; Jia-Shiou Cai
Author_Institution
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan
fYear
2013
fDate
25-26 Feb. 2013
Firstpage
383
Lastpage
385
Abstract
Self-heating effect in heterojunction bipolar transistors has been studied by using a finite element analysis software which allows for the consideration of device thickness and the boundary condition of convection. Compared to the conventional thermal-electro model, which neglects the device thickness and assumes the adiabatic boundary condition, the finite element analysis provides more accurate results, especially under high-power operations.
Keywords
electronic engineering computing; heterojunction bipolar transistors; HBT; adiabatic boundary condition; device thickness; finite element analysis software; heterojunction bipolar transistors; high-power operations; self-heating effects; thermal-electro model; Boundary conditions; Heating; Heterojunction bipolar transistors; Junctions; Mathematical model; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location
Kaohsiung
Print_ISBN
978-1-4673-3036-7
Type
conf
DOI
10.1109/ISNE.2013.6512373
Filename
6512373
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