Title :
Simulation of self-heating effects on heterojunction bipolar transistors
Author :
Yang-Hua Chang ; Jia-Shiou Cai
Author_Institution :
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan
Abstract :
Self-heating effect in heterojunction bipolar transistors has been studied by using a finite element analysis software which allows for the consideration of device thickness and the boundary condition of convection. Compared to the conventional thermal-electro model, which neglects the device thickness and assumes the adiabatic boundary condition, the finite element analysis provides more accurate results, especially under high-power operations.
Keywords :
electronic engineering computing; heterojunction bipolar transistors; HBT; adiabatic boundary condition; device thickness; finite element analysis software; heterojunction bipolar transistors; high-power operations; self-heating effects; thermal-electro model; Boundary conditions; Heating; Heterojunction bipolar transistors; Junctions; Mathematical model; Substrates; Temperature measurement;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512373
