Title :
A monolithic integrated, on chip matched GaAs power amplifier for HIPERPLAN with a single 3.3v supply
Author :
Bös, Thomas A. ; Lott, Urs
Author_Institution :
Swiss Federal Institute of Technology (ETH), Zurich, Laboratory for Electromagnetic Fields and Microwave Electronics, Gloriastr. 35, CH-8092, Zÿrich, Switzerland
Abstract :
For HIPERLAN a three stage monolithic integrated power amplifier was designed and realized with a single 3.3 V supply. In the frequency range of 5.15 to 5.3 GHz the MESFET amplifier delivers a saturated output power of 21.8 dBm and 19 dB gain at the ldB compression point. Full input and output on chip matching networks are included on a chip size of 1 mm × 2 mm
Keywords :
Broadband amplifiers; Frequency; Gallium arsenide; Impedance matching; MESFETs; Power amplifiers; Power generation; Power measurement; Telecommunication standards; Wireless LAN;
Conference_Titel :
Microwave Conference, 1996. 26th European
Conference_Location :
Prague, Czech Republic
DOI :
10.1109/EUMA.1996.337550
