DocumentCode :
2126366
Title :
A monolithic MESFET transimpedance amplifier using active inductors
Author :
Giannini, Franco ; Limiti, Ernesto ; Orengo, Giancarlo
Author_Institution :
Dipartimento di Ingegneria Elettronica, UniversitÃ\xa0 di Roma "Tor Vergata", Via della Ricerca Scientifica, 00133, Roma, ITALY.
Volume :
1
fYear :
1996
fDate :
6-13 Sept. 1996
Firstpage :
195
Lastpage :
198
Abstract :
A transimpedance amplilfier realised in 0.5 ¿m GaAs MESFET monolithic technology has been designed using the Alenia foundry process. The amplilfier features nearly 50 dBQ transimpedance gain and better than ¿14 dB output match in a 50 MHz ¿3.2 GHz band: this results have been achieved employing active inductors to reduce chip size and to improve the amplifier´s performance.
Keywords :
Active inductors; Bandwidth; Energy consumption; Frequency; Impedance matching; Inductance; MESFETs; Performance gain; Power amplifiers; Spirals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1996. 26th European
Conference_Location :
Prague, Czech Republic
Type :
conf
DOI :
10.1109/EUMA.1996.337551
Filename :
4138606
Link To Document :
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