• DocumentCode
    2126502
  • Title

    Calculation of internal quantum efficiency of β-FeSi2 light-emitting diode

  • Author

    Jung-Sheng Huang ; Kuan-Wei Lee ; Jung-Chin Chang ; Chan-Cheng Yeh ; Raksavas, W.

  • Author_Institution
    Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
  • fYear
    2013
  • fDate
    25-26 Feb. 2013
  • Firstpage
    409
  • Lastpage
    411
  • Abstract
    The purpose of this paper is to calculate the dc characteristics and investigate the internal quantum efficiency of β-FeSi2-based DH LED by analytical methods. The I-V characteristics of β-FeSi2 DH LED are calculated by using diffusion mechanism. The injected and leakage free electron current densities at the heterojunction between β-FeSi2 and n-Si are calculated by using thermionic emission mechanism. The ideal internal quantum efficiency η is proportional to eeVakT and η is about 0.07% at Va = 0.5V.
  • Keywords
    iron compounds; light emitting diodes; thermionic emission; FeSi2; diffusion mechanism; internal quantum efficiency; leakage free electron current density; light emitting diode; thermionic emission mechanism; Current density; DH-HEMTs; Educational institutions; Heterojunctions; Light emitting diodes; Next generation networking; Thermionic emission; β-FeSi2 DH LED; internal quantum efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-4673-3036-7
  • Type

    conf

  • DOI
    10.1109/ISNE.2013.6512381
  • Filename
    6512381
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2126502