DocumentCode
2126621
Title
Skew minimization techniques for 256M-bit synchronous DRAM and beyond
Author
Jin-Man Han ; Jung-Bae Lee ; Sei-Seung Yoon ; Se-Jin Jeong ; Churoo Park ; Il-Jae Cho ; Seung-Hoon Lee ; Domg-Il Seo
Author_Institution
Samsung Electronics Co. Ltd.
fYear
1996
fDate
13-15 June 1996
Firstpage
192
Lastpage
193
Abstract
A major issue in designing a high speed synchronous DRAM (SDRAM) is how to minimize skews, most of which are generated due lo unequal read/write data paths, different enable/disable times between column select lines (CSLs), unequal distribution of clock and unequal cell conditions. In this paper, we will present various circuit techniques for minimization of the skews to achieve the irtaxiiiium intemal clock frequency of a 256M-hit SDRAM.
Keywords
Random access memory; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3339-X
Type
conf
DOI
10.1109/VLSIC.1996.507767
Filename
507767
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