• DocumentCode
    2126621
  • Title

    Skew minimization techniques for 256M-bit synchronous DRAM and beyond

  • Author

    Jin-Man Han ; Jung-Bae Lee ; Sei-Seung Yoon ; Se-Jin Jeong ; Churoo Park ; Il-Jae Cho ; Seung-Hoon Lee ; Domg-Il Seo

  • Author_Institution
    Samsung Electronics Co. Ltd.
  • fYear
    1996
  • fDate
    13-15 June 1996
  • Firstpage
    192
  • Lastpage
    193
  • Abstract
    A major issue in designing a high speed synchronous DRAM (SDRAM) is how to minimize skews, most of which are generated due lo unequal read/write data paths, different enable/disable times between column select lines (CSLs), unequal distribution of clock and unequal cell conditions. In this paper, we will present various circuit techniques for minimization of the skews to achieve the irtaxiiiium intemal clock frequency of a 256M-hit SDRAM.
  • Keywords
    Random access memory; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-3339-X
  • Type

    conf

  • DOI
    10.1109/VLSIC.1996.507767
  • Filename
    507767