DocumentCode
2126641
Title
Characterization of ambipolar organic thin-film transistors
Author
Sheng-Luen Huang ; Shui-Hsiang Su ; Chung Ming Wu ; Yao-Sheng Hsieh ; Yokoyama, Masafumi
Author_Institution
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
fYear
2013
fDate
25-26 Feb. 2013
Firstpage
423
Lastpage
425
Abstract
The top contact ambipolar organic thin-film transistors (OTFTs) and inverter based on the active layer of pentacene/C60 have been fabricated. The device´s structure is glass/indium-tin oxide (ITO)/poly(methyl methacrylate) (PMMA)/pentacene/C60/Ag(source/drain). We studied the effect of active layer (pentacene, C60) thickness on the performance of OTFTs, and found their optimum thickness is 12 nm of pentacene and 40 nm of C60, respectively. The transistor shows ambipolar transporting characteristics with the output current (IDS) of -8.45 μ A 16.65 μA, electron and hole mobilities of 7.11×10-2 cm2/Vs and 1.2×10-1 cm2/Vs, respectively. Finally, an inverter has successfully been fabricated on the PET substrate based on the optimized ambipolar OTFTs. The inverter demonstrates both in the first and third quadrants with a high gain of 19 and 11.5, respectively.
Keywords
electron mobility; hole mobility; invertors; organic field effect transistors; thin film transistors; PET substrate; ambipolar transporting characteristics; contact ambipolar organic thin film transistors; current -8.45 muA; current 16.65 muA; electron mobility; glass; hole mobility; indium-tin oxide; inverter; optimized ambipolar OTFT; pentacene-C60 active layer; poly(methyl methacrylate); size 12 nm; size 40 nm; transistor output current; Glass; Inverters; Organic thin film transistors; Pentacene; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location
Kaohsiung
Print_ISBN
978-1-4673-3036-7
Type
conf
DOI
10.1109/ISNE.2013.6512388
Filename
6512388
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