• DocumentCode
    2126641
  • Title

    Characterization of ambipolar organic thin-film transistors

  • Author

    Sheng-Luen Huang ; Shui-Hsiang Su ; Chung Ming Wu ; Yao-Sheng Hsieh ; Yokoyama, Masafumi

  • Author_Institution
    Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
  • fYear
    2013
  • fDate
    25-26 Feb. 2013
  • Firstpage
    423
  • Lastpage
    425
  • Abstract
    The top contact ambipolar organic thin-film transistors (OTFTs) and inverter based on the active layer of pentacene/C60 have been fabricated. The device´s structure is glass/indium-tin oxide (ITO)/poly(methyl methacrylate) (PMMA)/pentacene/C60/Ag(source/drain). We studied the effect of active layer (pentacene, C60) thickness on the performance of OTFTs, and found their optimum thickness is 12 nm of pentacene and 40 nm of C60, respectively. The transistor shows ambipolar transporting characteristics with the output current (IDS) of -8.45 μ A 16.65 μA, electron and hole mobilities of 7.11×10-2 cm2/Vs and 1.2×10-1 cm2/Vs, respectively. Finally, an inverter has successfully been fabricated on the PET substrate based on the optimized ambipolar OTFTs. The inverter demonstrates both in the first and third quadrants with a high gain of 19 and 11.5, respectively.
  • Keywords
    electron mobility; hole mobility; invertors; organic field effect transistors; thin film transistors; PET substrate; ambipolar transporting characteristics; contact ambipolar organic thin film transistors; current -8.45 muA; current 16.65 muA; electron mobility; glass; hole mobility; indium-tin oxide; inverter; optimized ambipolar OTFT; pentacene-C60 active layer; poly(methyl methacrylate); size 12 nm; size 40 nm; transistor output current; Glass; Inverters; Organic thin film transistors; Pentacene; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-4673-3036-7
  • Type

    conf

  • DOI
    10.1109/ISNE.2013.6512388
  • Filename
    6512388