Title :
Photo-responsivity of a Si-based MIS photo-detector with multi-dielectric layers
Author :
Ming Chang Shih ; Sing Wei Fang ; Wen How Lan
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
Abstract :
We demonstrate the fabrication and characterizations of a white light blinded photo-detector based on a Si based metal insulator semiconductor (MIS) device structure with multi-layers of SiO2/TiO2 dielectric. Spectral responsivity peak at 850 nm with high discrimination in visible light had been achieved with 10 layers of SiO2/TiO2 dielectrics. Reflection spectral measurements and I-V characteristics were used to study the photo-detection performance of the fabricated MIS device with various layer numbers and thickness. We found that effective spectral discrimination of visible light can be achieved by this multi-dielectric layers with designed structure and materials selected. In addition, we have found the enhancement of the photo-current beyond IR range. A mechanism of carriers excitation in these multi-dielectric layers by mid-band gap impurity states at the interface between the Si substrate and the dielectric layer is discussed.
Keywords :
MIS devices; dielectric materials; multilayers; photodetectors; silicon; silicon compounds; titanium compounds; MIS photodetector; Si; SiO2-TiO2; dielectric multilayer; metal insulator semiconductor device structure; multidielectric layers; reflection spectral measurement; spectral responsivity; wavelength 850 nm; white light blinded photodetector; Detectors; Dielectrics; Fabrication; MIS devices; Reflection; Silicon; Substrates;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512389
