• DocumentCode
    2126652
  • Title

    A long data retention SOI-DRAM with the body refresh function

  • Author

    Tomishima, S. ; Morishita, F. ; Tsukude, M. ; Yamagata, T. ; Arimoto, K.

  • Author_Institution
    ULSI Lab., Mitsubishi Electr. Corp., Itami, Japan
  • fYear
    1996
  • fDate
    13-15 June 1996
  • Firstpage
    198
  • Lastpage
    199
  • Abstract
    We have proposed a body refresh function and circuits for SOI DRAMs. The body refresh utilizes a swinging of the bit line and gives stable body potential, long dynamic data retention time and low power consumption without any increase in the chip area.
  • Keywords
    DRAM chips; MOS memory circuits; cellular arrays; integrated circuit design; silicon-on-insulator; SOI-DRAM; bit line swinging; body potential; body refresh function; chip area; dynamic data retention time; power consumption; Circuits; Energy consumption;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-3339-X
  • Type

    conf

  • DOI
    10.1109/VLSIC.1996.507770
  • Filename
    507770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2126652