Deposition of homo-multilayer indium tin oxide films on PET substrates by roll-to-roll sputtering

Author

Hung-Wei Yeh ; Chih-Lung Tseng ; Po-Jui Chiang ; Jau-Ji Jou ; Nai-Hsiang Sun

Author_Institution

Dept. of Mech. Eng., Taipei Chengshih Univ. of Sci. & Technol., Taipei, Taiwan

fYear

2013

fDate

25-26 Feb. 2013

Firstpage

438

Lastpage

440

Abstract

In this letter, the homo-multilayer indium tin oxide (ITO) film is deposited by the continuous roll-to-roll sputtering at room temperature. While piling up to homo-5-layer ITO film, the best transmittance of 87.66% in visible wavelength and the sheet resistance of 68Ω/□ are obtained. The TEM diffraction images of ITO films show crystalline at the optimal 5-layer structure, and the nano-sized grains (~50 nm) distributed uniformly all over the surface from SEM and TEM investigation.

Keywords

electric resistance; grain size; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; transmission electron microscopy; ITO; PET substrates; SEM; TEM diffraction images; continuous roll-to-roll sputtering; homo-5-layer ITO film; homomultilayer indium tin oxide film deposition; nanosized grains; optimal 5-layer structure; sheet resistance; visible wavelength; Indium tin oxide; Optical films; Positron emission tomography; Resistance; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on

Conference_Location

Kaohsiung

Print_ISBN

978-1-4673-3036-7

Type

conf

DOI

10.1109/ISNE.2013.6512393

Filename

6512393