DocumentCode
2126795
Title
Enhancing the efficiency of inverted organic solar cells by using the exciton blocking layers
Author
Kai-Yuen Lam ; Hui-Hsuan Lee ; Shui-Hsiang Su ; Wen-Kai Lin ; Che-Chun Liu ; Zhi-Ren Wang ; Yokoyama, Masafumi
Author_Institution
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
fYear
2013
fDate
25-26 Feb. 2013
Firstpage
441
Lastpage
442
Abstract
In this study, inverted organic solar cells (IOSCs) have been fabricated and characterized. Device´s structure consists of the blend of poly(3-hexythiophene)(P3HT) and [6,6]-phenyl C61-butyric acid methyl ester(PCBM) as an active layer and a solution process of ZnO and V2O5 as a hole blocking layer (HBL) and electron blocking layer (EBL), respectively. The blocking layer possesses high charge mobility and wide band gap. The wide band gap can effectively suppress the diffusion of electron and hole separating from exciton to the electrodes, reducing the combined effect. Experimental results reveal that ZnO annealed in high temperature to procure nano-ridge can effectively enhance electrons to transport from active layer to the cathode.
Keywords
II-VI semiconductors; electrochemical electrodes; excitons; polymer blends; solar cells; vanadium compounds; wide band gap semiconductors; zinc compounds; EBL; HBL; IOSC; P3HT; PCBM; V2O5; ZnO; [6,6]-phenyl C61-butyric acid methyl ester; active layer; cathode; charge mobility; device structure; electrodes; electron blocking layer; electron diffusion; exciton blocking layers; hole blocking layer; inverted organic solar cell efficiency; nano-ridge; poly(3-hexythiophene) blend; wide band gap; Annealing; Charge carrier processes; Films; Indium tin oxide; Performance evaluation; Photovoltaic cells; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location
Kaohsiung
Print_ISBN
978-1-4673-3036-7
Type
conf
DOI
10.1109/ISNE.2013.6512395
Filename
6512395
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