DocumentCode
2126798
Title
Novel salicide technology using Ti hydrogenation for 0.1 /spl mu/m CMOS
Author
Ando, K. ; Matsubara, Y. ; Ishigami, Takashi ; Horiuchi, T. ; Nishimoto, S.
Author_Institution
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fYear
1996
fDate
11-13 June 1996
Firstpage
16
Lastpage
17
Abstract
A novel titanium self-aligned silicide (Ti salicide) process has been developed that uses in situ rapid thermal hydrogenation (RTH) of the Ti prior to rapid thermal annealing (RTA) to achieve 0.1-/spl mu/m CMOS. The in situ RTH enhances the silicidation reaction and reduces the nitridation reaction of the Ti. A low C54-TiSi/sub 2/ sheet resistance of 11.7 /spl Omega///spl square/ was obtained at a 0.1-/spl mu/m line width with 15-nm-thick deposited Ti.
Keywords
CMOS integrated circuits; integrated circuit metallisation; rapid thermal annealing; titanium compounds; 0.1 micron; C54-TiSi/sub 2/; CMOS IC; TiSi/sub 2/; in situ RTH; nitridation reaction; rapid thermal annealing; rapid thermal hydrogenation; salicide technology; sheet resistance; silicidation reaction; titanium self-aligned silicide; CMOS process; CMOS technology; Rapid thermal annealing; Rapid thermal processing; Silicidation; Silicides; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507776
Filename
507776
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