Non-volatile FCG (ferroelectric-capacitor and transistor-gate connection) memory cell with non-destructive read-out operation

Author

Katoh, Y. ; Fujieda, S. ; Hayashi, Y. ; Kunio, T.

Author_Institution

Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan

fYear

1996

fDate

11-13 June 1996

Firstpage

56

Lastpage

57

Abstract

A new non-volatile FCG (ferroelectric-capacitor and transistor-gate connection) memory cell, in which the ferroelectric capacitor is connected to a MOSFET gate electrode, is proposed for achieving non-destructive read-out memory operation. It is clarified that the ferroelectric capacitor area should be designed to be smaller than the MOSFET gate capacitor area to improve memory operation reliability. Nonvolatile memory operation for this FCG cell was confirmed by a Vt shift in the MOSFET, due to the ferroelectric polarization.

Keywords

MOS memory circuits; cellular arrays; circuit stability; ferroelectric capacitors; ferroelectric storage; integrated circuit design; integrated circuit interconnections; integrated circuit reliability; nondestructive readout; MOSFET gate electrode; capacitor area; ferroelectric capacitor; ferroelectric polarization; local interconnection; memory operation reliability; non-volatile FCG memory cell; nondestructive read-out operation; transistor-gate connection; Capacitors; Electrodes; Ferroelectric materials; MOSFET circuits; Nonvolatile memory; Polarization;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507792

Filename

507792