Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

Author

Furukawa, A. ; Abe, Y. ; Shimizu, S. ; Kuroi, T. ; Tokuda, Y. ; Inuishi, M.

Author_Institution

Adv. Technol. Res. & Dev. Center, Mitsubishi Electr. Corp., Itami, Japan

fYear

1996

fDate

11-13 June 1996

Firstpage

62

Lastpage

63

Abstract

Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

Keywords

MOS integrated circuits; MOSFET; hot carriers; integrated circuit technology; ion implantation; nitridation; nitrogen; 0.25 micron; LV operation; MOS IC; N implantation; NMOSFETs; Si:N; acceptor concentration drop; channel engineering; gate oxide; hot carrier degradation; low voltage operation; nitridation; short channel effects suppression; side-wall spacer; sub-quarter-micron MOSFETs; threshold voltage reduction; Degradation; Hot carriers; MOSFETs; Nitrogen; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507794

Filename

507794