Title :
Advanced ion implantation and rapid thermal annealing technologies for highly reliable 0.25 /spl mu/m dual gate CMOS
Author :
Shimizu, S. ; Kuroi, T. ; Kawasaki, Y. ; Tsutsumi, T. ; Oda, H. ; Inuishi, M. ; Miyoshi, H.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
Advanced ion implantation and rapid thermal annealing technologies are proposed to realize highly reliable 0.25 /spl mu/m salicided dual gate CMOS for high performance logic application. These technologies mainly consist of mixing the CoSi/sub 2//Si interface using silicon implantation, CVD-Si/sub 3/N/sub 4//CVD-SiO/sub 2/ sidewall spacer, nitrogen implantation in gate polysilicon and source/drain regions and rapid thermal annealing (RTA) for reduction of thermal budget.
Keywords :
CMOS logic circuits; chemical vapour deposition; cobalt compounds; elemental semiconductors; integrated circuit metallisation; ion implantation; rapid thermal annealing; silicon; 0.25 micron; CoSi/sub 2/-Si; gate polysilicon region; high performance logic application; ion implantation; rapid thermal annealing; salicided dual gate CMOS; sidewall spacer; source/drain region; thermal budget; CMOS logic circuits; CMOS technology; Ion implantation; Nitrogen; Rapid thermal annealing; Silicon; Space technology;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507795
