Title :
Recent progress of AlGaN Deep-UV LED by improving light-extraction efficiency
Author :
Hirayama, Hideki ; Maeda, Noritoshi ; Jo, Masafumi
Author_Institution :
RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Abstract :
We demonstrated significant improvement of light-extraction efficiency (LEE) of AlGaN ultraviolet (UV) C light-emitting diodes (LEDs) by using transparent p-AlGaN contact layer and highly-reflective p-type electrode.
Keywords :
Aluminum gallium nitride; Aluminum nitride; Electrodes; III-V semiconductor materials; Light emitting diodes; Nickel; Wide band gap semiconductors;
Conference_Titel :
Summer Topicals Meeting Series (SUM), 2015
Conference_Location :
Nassau, Bahamas
Print_ISBN :
978-1-4799-7467-2
DOI :
10.1109/PHOSST.2015.7248168
