Single step PVD planarized aluminum interconnect with low-/spl epsiv/ organic ILD for high performance and low cost ULSI

Author

Zhao, B. ; Biberger, A. ; Hoffman, V. ; Wang, S.-Q. ; Vasudev, P.K. ; Seidel, T.E.

Author_Institution

SEMATECH, Austin, TX, USA

fYear

1996

fDate

11-13 June 1996

Firstpage

72

Lastpage

73

Abstract

Single step PVD planarized Al interconnect using low-/spl epsiv/ (/spl epsiv/<3) material as ILD has been fabricated for high performance and low cost ULSI. Completely filled Al plugs with vertical side-wall were fabricated in organic low-/spl epsiv/ ILD for the first time. Up to 40% interconnect wiring capacitance reduction, low via resistance with via size down to 0.35 /spl mu/m, good interconnect reliability and low process cost have been achieved.

Keywords

ULSI; aluminium; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; permittivity; plasma CVD; wiring; 0.35 micron; Al; PVD; ULSI; interconnect reliability; interconnect wiring capacitance; interlevel dielectric; organic ILD; planarized interconnect; process cost; vertical side-wall; via resistance; via size; Aluminum; Atherosclerosis; Capacitance; Costs; Plugs; Ultra large scale integration; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507797

Filename

507797