Title :
Wide feature dielectric planarization using MnO/sub 2/ slurry
Author :
Kishii, S. ; Nakamura, K. ; Ohiski, A. ; Okui, Y. ; Suzuki, R. ; Arimoto, Y.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We used MnO/sub 2/ slurry for dielectric planarization. We found that MnO/sub 2/ slurry has an ample removal rate at a low polishing pressure, whereas conventional slurry does not. Therefore, MnO/sub 2/ slurry can planarize dielectric more completely, with less lower level removal than conventional slurry.
Keywords :
VLSI; colloids; dielectric materials; integrated circuit interconnections; manganese compounds; polishing; surface cleaning; MnO/sub 2/; MnO/sub 2/ slurry; SiO/sub 2/; chemical-mechanical polishing; dielectric planarization; lower level dielectric removal; polishing pressure; removal rate; Dielectrics; Planarization; Slurries;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507798
