A 3–14GHz ultra-wideband low-noise amplifier in 0.13μm CMOS using double-channel and global noise-cancellation

Author

Liang, Yuan

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´´an, China

fYear

2012

fDate

21-23 April 2012

Firstpage

1501

Lastpage

1504

Abstract

A 1.2V 3-14GHz ultra-wideband (UWB) CMOS low noise amplifier (LNA) is reported. By the utilization of double channel topology the input matching, flat gain as well as low noise is achieved simultaneously. The LNA obtains the maximum S₂₁ of 14.2dB in band. Maximum gain rippling is only 0.1dB across the desired broadband. IIP3 of -3dBm at 8GHz is obtained. The I/O reflection coefficient are both better than -10.2dB. The noise figure (NF) falls from 3.72dB to 1.46dB with frequency monotonically, and the power dissipation is merely 10.5mW.

Keywords

CMOS integrated circuits; low noise amplifiers; ultra wideband technology; 13μm CMOS; I-O reflection coefficient; double channel topology; frequency 3 GHz to 14 GHz; gain rippling; global noise-cancellation; noise figure; noise figure 3.72 dB to 1.46 dB; power 10.5 mW; power dissipation; size 0.13 mum; ultra wideband CMOS low noise amplifier; voltage 1.2 V; Gain; Impedance; Impedance matching; Noise; Noise measurement; Radio frequency; Topology; CMOS RF Components and circuit; Double-channel; Noise-Cancellation; UWB LNA;

fLanguage

English

Publisher

ieee

Conference_Titel

Consumer Electronics, Communications and Networks (CECNet), 2012 2nd International Conference on

Conference_Location

Yichang

Print_ISBN

978-1-4577-1414-6

Type

conf

DOI

10.1109/CECNet.2012.6202016

Filename

6202016