DocumentCode
2127445
Title
Silicon molar volume discrepancy: perfection of the NRLM crystal [for Avogadro constant determination]
Author
Nakayama, K. ; Fujimoto, H. ; Ishikawa, T. ; Takeno, H.
Author_Institution
Nat. Res. Lab. of Metrol., Ibaraki, Japan
fYear
2000
fDate
14-19 May 2000
Firstpage
115
Lastpage
116
Abstract
A large discrepancy was found in the molar volume of silicon used to determine Avogadro constant. Voids are suspected to cause the difference in the molar volume. Laser scattering tomography, secco-etching, electron spin resonance and X-ray topography have been applied to Japanese silicon to detect voids but no voids were observed in the crystal.
Keywords
Constants; Density measurement; Etching; Light scattering; Measurement standards; Paramagnetic resonance; Silicon; X-ray topography; Avogadro constant determination; NRLM3 sample; Si; X-ray topography; crystal perfection; electron spin resonance; flow pattern defects; laser scattering tomography; molar volume discrepancy; secco-etching; voids absence; Chemical lasers; Laboratories; Metrology; Paramagnetic resonance; Resonance light scattering; Silicon; Surfaces; Tomography; X-ray lasers; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2000 Conference on
Conference_Location
Sydney, NSW, Australia
Print_ISBN
0-7803-5744-2
Type
conf
DOI
10.1109/CPEM.2000.850904
Filename
850904
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