DocumentCode
2127468
Title
Density comparison measurement of silicon by pressure of flotation method [for Avogadro constant determination]
Author
Waseda, A. ; Fujii, K.
Author_Institution
Nat. Res. Lab. of Metrol., Ibaraki, Japan
fYear
2000
fDate
14-19 May 2000
Firstpage
117
Lastpage
118
Abstract
We have developed a new density comparison measurement system to study defect and impurity effects on silicon single crystals, and carried out density comparison measurement for S2-S3 and S4-S5 silicon spheres. Further prospects are also discussed.
Keywords
Constants; Crystal defects; Density measurement; Measurement standards; Silicon; Avogadro constant determination; Si; defect effects; density comparison measurement; impurity effects; pressure of flotation method; relative uncertainty; single crystals; standard spheres; Crystals; Density measurement; Impurities; Isothermal processes; Laboratories; Metrology; Pressure measurement; Silicon; Solids; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2000 Conference on
Conference_Location
Sydney, NSW, Australia
Print_ISBN
0-7803-5744-2
Type
conf
DOI
10.1109/CPEM.2000.850905
Filename
850905
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