Title :
NURA: a feasible, gas-dielectric interconnect process
Author :
Anand, M.B. ; Yamada, M. ; Shibata, H.
Author_Institution :
Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
We have proposed a gas-dielectric interconnect process, and demonstrated its feasibility. While several engineering problems need to tackled before the proposed process is manufacturable, the incentive for further development of this process is huge since it can lead to the minimum physical value of the relative dielectric constant, 1.0.
Keywords :
dielectric materials; integrated circuit interconnections; permittivity; NURA; dielectric constant; gas-dielectric interconnect; Dielectric constant; Manufacturing processes;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507801
