Suppression of the SOI floating-body effects by linked-body device structure

Author

Chen, W. ; Taur, Y. ; Sadana, D. ; Jenkins, K.A. ; Sun, J. ; Cohen, S.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1996

fDate

11-13 June 1996

Firstpage

92

Lastpage

93

Abstract

A novel "linked-body" SOI-CMOS device structure is presented. This structure suppresses the unwanted SOI floating-body effects, yet retaining all the speed advantage of SOI devices. It has much better short-channel effect and very low off-state current compared with regular SOI devices for digital applications, and has no "kink" in the I-V curves for analog applications. Excellent ring oscillator performance, improved breakdown characteristics, and absence of transient drain-current overshoot are demonstrated in linked-body SOI devices.

Keywords

CMOS integrated circuits; electric breakdown; integrated circuit technology; oxidation; silicon-on-insulator; SOI floating-body effects; SOI-CMOS device structure; Si; analog applications; breakdown characteristics; digital applications; floating-body effects suppression; incomplete field oxidation; linked-body device structure; low offstate current; ring oscillator performance; short-channel effect; Electric breakdown; Ring oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507805

Filename

507805