Ultra-thin, highly uniform thin film SOI MOSFET with low series resistance using pattern-constrained epitaxy (PACE)

We report a novel fabrication process for a self-aligned, ultrathin, highly uniform thin film SOI MOSFET with low series resistance. SOI films as thin as 11 nm with 5% uniformity across the wafer was achieved. Self-aligned, ultra-thin SOI n-MOSFETs with 8 nm-50 nm undoped channel were fabricated. Excellent device characteristics (L/sub eff/=0.2 /spl mu/m, g/sub m/=242 mS/mm, R/sub s/d/=333 /spl Omega/-/spl mu/m, A/sub v/(g/sub m//g/sub d/)=43) were obtained.