DocumentCode :
2127696
Title :
Dielectric function evolution as Bruggeman method solution
Author :
Rotaru, Cristina ; Flueraru, C. ; Nastase, S. ; Rotaru, I.
Author_Institution :
Nat. Res. Dev. Inst. for Microtechnol., Bucharest, Romania
Volume :
2
fYear :
1997
fDate :
7-11 Oct 1997
Firstpage :
447
Abstract :
The ellipsometry is a proper technique for analyzing dielectric response of thin solid films, particularly for polycrystalline silicon. The behavior of dielectric function is usually analyzed by the Effective Medium Approximation (Bruggeman model), which gives three solution. The physical problem has only one solution. In this paper are discussed from a physical point of view the solutions of dielectric function
Keywords :
dielectric function; elemental semiconductors; ellipsometry; semiconductor thin films; silicon; Bruggeman method solution; Effective Medium Approximation; Si; dielectric function evolution; dielectric response; ellipsometry; polycrystalline Si; thin solid films; Dielectric thin films; Ellipsometry; Equations; Optical films; Optical refraction; Optical sensors; Optical surface waves; Silicon; Solids; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
Type :
conf
DOI :
10.1109/SMICND.1997.651243
Filename :
651243
Link To Document :
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