DocumentCode
2127719
Title
Silicon RF devices fabricated by ULSI processes featuring 0.1-/spl mu/m SOI-CMOS and suspended inductors
Author
Hisamoto, D. ; Tanaka, S. ; Tanimoto, T. ; Nakamura, Y. ; Kimura, S.
Author_Institution
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fYear
1996
fDate
11-13 June 1996
Firstpage
104
Lastpage
105
Abstract
High-performance RF devices were fabricated using standard Si ULSI processes. Suspended inductors and 0.1-/spl mu/m CMOS devices were integrated on an SOI wafer having a cavity beneath the devices. A high inductor resonance frequency of 19.6 GHz and a low 0.1-/spl mu/m SOI-NMOS noise figure as small as 0.8 dB at 2 GHz were obtained, which surpass presently available mobile telecommunication GaAs MESFETs in performance.
Keywords
CMOS integrated circuits; UHF integrated circuits; ULSI; elemental semiconductors; inductors; integrated circuit technology; silicon; silicon-on-insulator; 0.1 micron; 0.8 dB; 19.6 GHz; 2 GHz; SOI CMOS; Si; Si RF devices; ULSI processes; suspended inductors; Gallium arsenide; Inductors; MESFETs; Noise figure; Radio frequency; Resonance; Resonant frequency; Silicon; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507810
Filename
507810
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