A 50 GHz implanted base silicon bipolar technology with 35 GHz static frequency divider

Author

Bok, J. ; Felder, A. ; Meister, T.F. ; Franosch, M. ; Aufinger, K. ; Wurzer, M. ; Schreiter, R. ; Boguth, S. ; Treitinger, L.

Author_Institution

Corp. Res. & Dev., Siemens AG, Munich, Germany

fYear

1996

fDate

11-13 June 1996

Firstpage

108

Lastpage

109

Abstract

A 0.5 /spl mu/m silicon bipolar technology for mixed digital/analogue RF applications is presented. Very steep base profiles are realized by ion implantation and subsequent base diffusion. Cut-off frequencies and maximum oscillation frequencies of 50 GHz and ECL gate delay of 16 ps are obtained without increasing the process complexity in comparison to a 0.8 /spl mu/m production technology. A static 2:1 frequency divider operates up to 35 GHz, the highest value reported for any silicon based technology.

Keywords

MMIC frequency convertors; bipolar MIMIC; bipolar MMIC; doping profiles; elemental semiconductors; frequency dividers; integrated circuit technology; ion implantation; millimetre wave frequency convertors; mixed analogue-digital integrated circuits; silicon; 0.5 micron; 16 ps; 35 GHz; 50 GHz; Si; base diffusion; implanted base Si bipolar technology; ion implantation; mixed digital/analogue RF applications; static frequency divider; steep base profiles; Cutoff frequency; Delay; Frequency conversion; Ion implantation; Production; Radio frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507812

Filename

507812