Effect of a back gate on the AC characteristics of quantum Hall devices

Author

Delahaye, F. ; Kibble, B.P. ; Zarka, A.

Author_Institution

Bur. Int. des Poids et Mesures, Sevres, France

fYear

2000

fDate

14-19 May 2000

Firstpage

152

Lastpage

153

Abstract

When measured with AC at kHz frequencies the quantized Hall resistance (QHR) of a quantum Hall sample is usually found to be current and frequency dependent. We show that these AC characteristics can be modified by applying an AC potential difference between a back gate and the two-dimensional electron gas. The QHR current coefficient varies with the gate voltage and can be made equal to zero by an appropriate voltage setting. In these conditions the QHR frequency dependence is also reduced.

Keywords

Current distribution; Electric resistance measurement; Measurement standards; Quantum Hall effect; Two-dimensional electron gas; AC characteristics; AC potential difference; back gate effect; current dependent; current distribution; frequency dependent; gate voltage dependence; quantized Hall resistance; quantum Hall devices; two-dimensional electron gas; Bridge circuits; Coaxial components; Current distribution; Electrical resistance measurement; Electrons; Frequency dependence; Frequency measurement; Molecular beam epitaxial growth; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements Digest, 2000 Conference on

Conference_Location

Sydney, NSW, Australia

Print_ISBN

0-7803-5744-2

Type

conf

DOI

10.1109/CPEM.2000.850923

Filename

850923