Effects of quantization on the electrical characteristics of deep submicron p- and n-MOSFETs

Author

Jallepalli, S. ; Bude, J. ; Shih, W.K. ; Pinto, M.R. ; Maziar, C.M. ; Tasch, A.F.

Author_Institution

Texas Univ., Austin, TX, USA

fYear

1996

fDate

11-13 June 1996

Firstpage

138

Lastpage

139

Abstract

A first-principles approach to inversion layer quantization for arbitrarily complex band structures has been developed that has allowed, for the first time, hole quantization and its effects on p-MOSFET device characteristics to be studied. In addition, electron quantization effects are revisited, improving on previous, simpler approaches. In particular, the impact of quantization on the threshold voltages and "effective" gate oxide thicknesses of p- and n-MOSFETs is investigated. A simple compact model is provided to quantitatively describe the threshold voltage shifts as a function of the doping concentration and the oxide thickness. The results can be used to both identify and model these effects using popular device simulators.

Keywords

MOSFET; inversion layers; quantisation (quantum theory); semiconductor device models; band structure; deep submicron device; doping concentration; electrical characteristics; electron quantization; gate oxide thickness; hole quantization; inversion layer quantization; model; n-MOSFET; p-MOSFET; simulation; threshold voltage; Doping; Electric variables; Electrons; MOSFET circuits; Quantization; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507824

Filename

507824