Title :
Impact of cosmic ray neutron induced soft errors on advanced submicron CMOS circuits
Author :
Tosaka, Y. ; Satoh, S. ; Suzuki, Kenji ; Sugii, T. ; Ehara, H. ; Woffinden, G.A. ; Wender, S.A.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We numerically studied the neutron effects on submicron CMOS SRAM and LATCH circuits using a developed simulator which agrees well with the experimental charge collection measurements. We showed that the neutron effects have influence on SEs in advanced integrated circuits, especially for LATCH. If the Pb-Sn solder or other materials with high /spl alpha/-particle emission rates are not included, the neutrons are main SE components in advanced integrated circuits.
Keywords :
CMOS logic circuits; CMOS memory circuits; SRAM chips; cosmic ray interactions; cosmic ray neutrons; errors; flip-flops; integrated circuit modelling; neutron effects; LATCH circuit; SRAM circuit; charge collection; cosmic ray neutron induced soft errors; integrated circuit; numerical simulation; submicron CMOS circuit; Charge measurement; Circuit simulation; Current measurement; Integrated circuit measurements; Latches; Neutrons; Random access memory;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507828
