DocumentCode
2128115
Title
Impact of cosmic ray neutron induced soft errors on advanced submicron CMOS circuits
Author
Tosaka, Y. ; Satoh, S. ; Suzuki, Kenji ; Sugii, T. ; Ehara, H. ; Woffinden, G.A. ; Wender, S.A.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1996
fDate
11-13 June 1996
Firstpage
148
Lastpage
149
Abstract
We numerically studied the neutron effects on submicron CMOS SRAM and LATCH circuits using a developed simulator which agrees well with the experimental charge collection measurements. We showed that the neutron effects have influence on SEs in advanced integrated circuits, especially for LATCH. If the Pb-Sn solder or other materials with high /spl alpha/-particle emission rates are not included, the neutrons are main SE components in advanced integrated circuits.
Keywords
CMOS logic circuits; CMOS memory circuits; SRAM chips; cosmic ray interactions; cosmic ray neutrons; errors; flip-flops; integrated circuit modelling; neutron effects; LATCH circuit; SRAM circuit; charge collection; cosmic ray neutron induced soft errors; integrated circuit; numerical simulation; submicron CMOS circuit; Charge measurement; Circuit simulation; Current measurement; Integrated circuit measurements; Latches; Neutrons; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507828
Filename
507828
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