Title :
New model of ultra short symmetric double gate MOSFET
Author :
Manhawy, Wael El ; Fikry, Wael ; Habeeb, Serag El Din
Author_Institution :
Mentor Graphics, Shubra-El-Khema
Abstract :
This paper presents a new model for ultra short symmetric double gate MOSFET with gate lengths in the 10 nm to 50 nm range. A non-charge sheet based analytical model of undoped symmetric double-gate MOSFETs is developed in this model using the Surface Potential Plus (SPP) approach. The model is based on Cheming Hu model in solving the Poisson equation in the term of the electron concentration rather than surface potential. In this model, physical representation for the transistor channel region is combined with empirical fitting parameters that accurately model the variation of gate and drain voltages in such small dimensions. The results of the model is validated through the two dimensional simulations of the device simulator (NanoMos). The model gives very accurate results with 1.1% average error percentage and 1.9% maximum error percentage. Moreover, the model achieves a very high performance in terms of speed without any problem in convergence.
Keywords :
MOSFET; Poisson equation; semiconductor device models; NanoMos; Poisson equation; analytical model; device simulator; electron concentration; fitting parameters; noncharge sheet; surface potential plus approach; transistor channel region; ultra short symmetric double gate MOSFET; undoped symmetric double-gate MOSFET; Analytical models; Computational modeling; Electrons; Graphics; MOSFET circuits; Poisson equations; Semiconductor device modeling; Silicon; Surface fitting; Voltage; MOSFET; Model; Symmetric Double Gate;
Conference_Titel :
Electrical and Computer Engineering, 2008. CCECE 2008. Canadian Conference on
Conference_Location :
Niagara Falls, ON
Print_ISBN :
978-1-4244-1642-4
Electronic_ISBN :
0840-7789
DOI :
10.1109/CCECE.2008.4564504