Title :
Plasma doping of boron for fabricating the surface channel sub-quarter micron PMOSFET
Author :
Mizuno, B. ; Takase, M. ; Nakayama, I. ; Ogura, M.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
Plasma doping method has been applied to sub-quarter micron surface channel PMOSFET for the first time. Plasma doping method has been considered as one of the most promising candidates to obtain ultra-shallow doping profiles, because of its low energy, high throughput and room temperature operation.
Keywords :
MOSFET; boron; doping profiles; elemental semiconductors; plasma applications; semiconductor doping; silicon; Si:B; energy; plasma doping; room temperature operation; surface channel sub-quarter micron PMOSFET; throughput; ultra-shallow doping profiles; Boron; Doping profiles; MOSFET circuits; Plasma temperature; Throughput;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507839
