DocumentCode :
2128388
Title :
Optical properties of a-Si3N4 and a-SiOx Ny
Author :
Modreanu, M. ; Tomozeiu, N. ; Cosmin, P. ; Gartner, M.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Volume :
2
fYear :
1997
fDate :
7-11 Oct 1997
Firstpage :
497
Abstract :
Some optical properties of a-SiNx and a-SiOxNy films deposited by LPCVD method are studied. Refractive index measured by ellipsometry method and IR absorption are studied as a function of some deposition parameters: temperature of deposition, gases flux ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator model
Keywords :
CVD coatings; amorphous state; chemical vapour deposition; ellipsometry; infrared spectra; insulating thin films; optical dispersion; refractive index; silicon compounds; IR absorption; LPCVD method; Si3N4; SiON; a-Si3N4; a-SiOxNy; deposition parameters; deposition temperature; ellipsometry method; films; gases flux ratio; optical properties; refractive index; refractive index dispersion; single-oscillator model; Bonding; Electromagnetic wave absorption; Fluid flow; Frequency; Optical films; Optical refraction; Optical variables control; Phonons; Refractive index; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
Type :
conf
DOI :
10.1109/SMICND.1997.651270
Filename :
651270
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2128388
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