Title :
193 nm phase-shifting lithography with single layer resist for VLSIs beyond 1 G-bit DRAM
Author :
Asai, S. ; Takechi, S. ; Kitamura, Y. ; Tabata, Y. ; Nozaki, K. ; Yano, E. ; Hanyu, I.
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
Abstract :
We have demonstrated the usefulness of ArF lithography with single layer resist based on adamantyl copolymer. Using the alternating phase shifting mask, 0.12 /spl mu/m L&S patterns has been achieved, and we are looking forward to applying it to VLSIs larger than 1 G-bit DRAM.
Keywords :
DRAM chips; VLSI; argon compounds; excimer lasers; nanotechnology; phase shifting masks; photolithography; photoresists; polymer blends; polymer films; 0.12 mum; 193 nm; 4 Gbit; ArF; ArF excimer laser lithography; DRAM cell patterns; VLSI; adamantyl copolymer; alternating phase shifting mask; line/space patterns; phase-shifting lithography; single layer resist; Lithography; Random access memory; Resists; Very large scale integration;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507844
