DocumentCode :
2128553
Title :
Feasibility demonstration of 0.18 /spl mu/m and 0.13 /spl mu/m optical projection lithography based on CD control calculations
Author :
Kee-Ho Kim ; Ronse, K. ; Yen, A. ; Van den Hove, L.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
1996
fDate :
11-13 June 1996
Firstpage :
186
Lastpage :
187
Abstract :
For the first time, it has been shown that 0.18 /spl mu/m and 0.13 /spl mu/m generations can be printed with acceptable CD control using optical projection lithography (248 nm and 193 nm wavelengths respectively). To prove this, a combination of stepper parameters and resolution enhancement techniques was optimised first. The Norman-Debora software allowed us to predict the actual CD control for printing 0.18 /spl mu/m grouped and isolated features using KrF and printing 0.13 /spl mu/m features using ArF, based on realistic process windows and focus/exposure budgets which have been calibrated to experiments for 0.25 /spl mu/m and 0.18 /spl mu/m.
Keywords :
image resolution; phase shifting masks; photolithography; proximity effect (lithography); semiconductor process modelling; size control; 0.13 mum; 0.18 mum; 193 nm; 248 nm; ArF; CD control calculations; KrF; Norman-Debora software; focus/exposure budgets; grouped features; isolated features; optical projection lithography; optical proximity correction; phase shifting masks; process windows; quadrupole illumination; resolution enhancement techniques; stepper parameters; Lithography; Optical control; Printing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
Type :
conf
DOI :
10.1109/VLSIT.1996.507846
Filename :
507846
Link To Document :
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