DocumentCode :
2128796
Title :
Status and challenges in deep UV semiconductor lasers
Author :
Bryan, Zachary ; Bryan, Isaac ; Kirste, Ronny ; Collazo, Ramon ; Sitar, Zlatko
Author_Institution :
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA
fYear :
2015
fDate :
13-15 July 2015
Firstpage :
123
Lastpage :
124
Abstract :
Despite the rapid progress in III-nitride-based laser diodes, sub-300 nm UV semiconductors lasers have not been realized yet. UV optoelectronic devices have a variety of applications such as sterilization, water purification, spectroscopy, high density optical data storage, and biological sensing. More specifically, UV laser diodes can be used as an alternative to expensive, bulky, and potentially toxic tube lasers. Technical and scientific barriers arise from the lack of proper crystalline substrates and a poor understanding of defect control in the wide bandgap semiconductors. AlGaN-based technology developed on single crystalline AlN substrates and impurity control in the active region offers a pathway to address all these challenges.
Keywords :
Aluminum gallium nitride; Aluminum nitride; Cavity resonators; Lasers; Optical waveguides; Substrates; Wide band gap semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Summer Topicals Meeting Series (SUM), 2015
Conference_Location :
Nassau, Bahamas
Print_ISBN :
978-1-4799-7467-2
Type :
conf
DOI :
10.1109/PHOSST.2015.7248225
Filename :
7248225
Link To Document :
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