• DocumentCode
    2128796
  • Title

    Status and challenges in deep UV semiconductor lasers

  • Author

    Bryan, Zachary ; Bryan, Isaac ; Kirste, Ronny ; Collazo, Ramon ; Sitar, Zlatko

  • Author_Institution
    Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA
  • fYear
    2015
  • fDate
    13-15 July 2015
  • Firstpage
    123
  • Lastpage
    124
  • Abstract
    Despite the rapid progress in III-nitride-based laser diodes, sub-300 nm UV semiconductors lasers have not been realized yet. UV optoelectronic devices have a variety of applications such as sterilization, water purification, spectroscopy, high density optical data storage, and biological sensing. More specifically, UV laser diodes can be used as an alternative to expensive, bulky, and potentially toxic tube lasers. Technical and scientific barriers arise from the lack of proper crystalline substrates and a poor understanding of defect control in the wide bandgap semiconductors. AlGaN-based technology developed on single crystalline AlN substrates and impurity control in the active region offers a pathway to address all these challenges.
  • Keywords
    Aluminum gallium nitride; Aluminum nitride; Cavity resonators; Lasers; Optical waveguides; Substrates; Wide band gap semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Summer Topicals Meeting Series (SUM), 2015
  • Conference_Location
    Nassau, Bahamas
  • Print_ISBN
    978-1-4799-7467-2
  • Type

    conf

  • DOI
    10.1109/PHOSST.2015.7248225
  • Filename
    7248225