DocumentCode
2128796
Title
Status and challenges in deep UV semiconductor lasers
Author
Bryan, Zachary ; Bryan, Isaac ; Kirste, Ronny ; Collazo, Ramon ; Sitar, Zlatko
Author_Institution
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA
fYear
2015
fDate
13-15 July 2015
Firstpage
123
Lastpage
124
Abstract
Despite the rapid progress in III-nitride-based laser diodes, sub-300 nm UV semiconductors lasers have not been realized yet. UV optoelectronic devices have a variety of applications such as sterilization, water purification, spectroscopy, high density optical data storage, and biological sensing. More specifically, UV laser diodes can be used as an alternative to expensive, bulky, and potentially toxic tube lasers. Technical and scientific barriers arise from the lack of proper crystalline substrates and a poor understanding of defect control in the wide bandgap semiconductors. AlGaN-based technology developed on single crystalline AlN substrates and impurity control in the active region offers a pathway to address all these challenges.
Keywords
Aluminum gallium nitride; Aluminum nitride; Cavity resonators; Lasers; Optical waveguides; Substrates; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Summer Topicals Meeting Series (SUM), 2015
Conference_Location
Nassau, Bahamas
Print_ISBN
978-1-4799-7467-2
Type
conf
DOI
10.1109/PHOSST.2015.7248225
Filename
7248225
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