• DocumentCode
    2128922
  • Title

    Direct lateral profiling of both interface traps and oxide charge in thin gate MOSFET devices

  • Author

    Chen, C. ; Ma, T.P.

  • Author_Institution
    Center for Microelectron. Mater. & Structures, Yale Univ., New Haven, CT, USA
  • fYear
    1996
  • fDate
    11-13 June 1996
  • Firstpage
    230
  • Lastpage
    231
  • Abstract
    A simple method has been developed to measure the localized hot carrier damage in scaled thin-gate MOSFET´s. Lateral distributions of both interface traps and oxide charge can be derived directly from experimental charge pumping results without numerical simulation.
  • Keywords
    MOSFET; electric charge; electron traps; hot carriers; interface states; charge pumping results; direct lateral profiling; interface traps; localized hot carrier damage; oxide charge; thin gate MOSFET devices; Charge pumps; Hot carriers; Numerical simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-3342-X
  • Type

    conf

  • DOI
    10.1109/VLSIT.1996.507861
  • Filename
    507861
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2128922