Title :
Ammonia molecular beam epitaxy technology for UV light emitters
Author :
Young, E.C. ; Yonkee, B.P. ; Leonard, J. ; Wu, F. ; DenBaars, S.P. ; Nakamura, S. ; SpeckMaterials, J.S.
Author_Institution :
Department, University of California, Santa Barbara, USA 93106
Abstract :
Ill-Nitride molecular beam epitaxy (MBE] is a flexible and fast research tool for development and demonstration of new alloys and device structures. While MBE is typically not used as a production technique for optoelectronic devices, excellent material quality can be achieved, as evidenced by extremely high IQE deep UV active regions [1], as well as laser quality active regions with emission wavelengths from the near UV to visible [2]. Ammonia MBE in particular also offers the ability to achieve highly doped layers with world record mobility [3]. In this paper, we will present recent research results using ammonia-assisted MBE that are relevant to developing high efficiency UV emitters.
Conference_Titel :
Summer Topicals Meeting Series (SUM), 2015
Conference_Location :
Nassau, Bahamas
Print_ISBN :
978-1-4799-7467-2
DOI :
10.1109/PHOSST.2015.7248233
