Title :
Vertical cavity transistor laser for on-chip OICs
Author :
Feng, Milton ; Liu, Michael ; Wang, Curtis ; Holonyak, Nick, Jr.
Author_Institution :
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1406 W. Green St., Urbana, IL 61801 USA
Abstract :
Transistor Laser (TL) has picosecond radiative recombination lifetime; thus, it will have modulation bandwidth higher than VCSELs. TL has demonstrated error free transmission at 22 Gb/s and vertical cavity TL can achieve ultralow power operation.
Keywords :
Cavity resonators; Modulation; Optical attenuators; Radiative recombination; Stimulated emission; Transistors; Vertical cavity surface emitting lasers;
Conference_Titel :
Summer Topicals Meeting Series (SUM), 2015
Conference_Location :
Nassau, Bahamas
Print_ISBN :
978-1-4799-7467-2
DOI :
10.1109/PHOSST.2015.7248238
