• DocumentCode
    2129197
  • Title

    Response linearity test of biased 1337 traps

  • Author

    Balling, P. ; Fox, N.P.

  • Author_Institution
    Czech Metrol. Inst., Praha, Czechoslovakia
  • fYear
    2000
  • fDate
    14-19 May 2000
  • Firstpage
    263
  • Lastpage
    264
  • Abstract
    The upper power limit whilst maintaining a linear response of silicon trap detectors operated under bias voltage was measured for different wavelengths. Measurement results confirm that a bias voltage of 10 V extends the linearity limit by factor of more than 10 for very narrow beams and more than 30 for wide beams.
  • Keywords
    elemental semiconductors; impurity states; photodiodes; radiometry; silicon; transfer standards; 10 V; Si; Si trap detectors; bias voltage; biased 1337 traps; linearity limit; power limit; response linearity test; Dark current; Detectors; Diodes; Linearity; Manufacturing; Power measurement; Silicon; Testing; Voltage measurement; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements Digest, 2000 Conference on
  • Conference_Location
    Sydney, NSW, Australia
  • Print_ISBN
    0-7803-5744-2
  • Type

    conf

  • DOI
    10.1109/CPEM.2000.850977
  • Filename
    850977