Title :
Response linearity test of biased 1337 traps
Author :
Balling, P. ; Fox, N.P.
Author_Institution :
Czech Metrol. Inst., Praha, Czechoslovakia
Abstract :
The upper power limit whilst maintaining a linear response of silicon trap detectors operated under bias voltage was measured for different wavelengths. Measurement results confirm that a bias voltage of 10 V extends the linearity limit by factor of more than 10 for very narrow beams and more than 30 for wide beams.
Keywords :
elemental semiconductors; impurity states; photodiodes; radiometry; silicon; transfer standards; 10 V; Si; Si trap detectors; bias voltage; biased 1337 traps; linearity limit; power limit; response linearity test; Dark current; Detectors; Diodes; Linearity; Manufacturing; Power measurement; Silicon; Testing; Voltage measurement; Wavelength measurement;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2000 Conference on
Conference_Location :
Sydney, NSW, Australia
Print_ISBN :
0-7803-5744-2
DOI :
10.1109/CPEM.2000.850977
