Title :
Voltage doubler rectifier based on 4H-SiC diodes for high-temperatures energy harvesting applications
Author :
Rao, S. ; Pangallo, G. ; Della Corte, F.G. ; Nipoti, R.
Author_Institution :
Dept. of Inf. Eng., Univ. Degli Studi “Mediterranea”, Reggio Calabria, Italy
Abstract :
A voltage doubler rectifier for hostile environments, in particular at high temperatures, is presented. The system consists of a clamper section and a single diode rectifier working at higher temperatures with respect to the conventional operating thermal domain of silicon electronics. Both sections are realized with integrated 4H-SiC Schottky diodes. The rectified output amplitude signal voltage increases with the temperature due to the corresponding diode threshold voltage lowering.
Keywords :
Schottky diodes; energy harvesting; rectifying circuits; silicon compounds; voltage multipliers; wide band gap semiconductors; 4H-SiC Schottky diodes; 4H-SiC diodes; SiC; amplitude signal voltage; clamper section; diode threshold voltage lowering; high-temperatures energy harvesting; silicon electronics; single diode rectifier; voltage doubler rectifier; Rectifiers; Schottky diodes; Silicon carbide; Temperature; Temperature sensors; High temperature devices; schottky diode; silicon carbide; voltage doubler rectifier; wide band gap semiconductors;
Conference_Titel :
AISEM Annual Conference, 2015 XVIII
Conference_Location :
Trento
DOI :
10.1109/AISEM.2015.7066776
